EECS 423

Solid State Device Laboratory

Fall 2000

M W F 1:30-2:30 pm

1003 EECS BLDG.

 

Updated Schedule

Handouts

 

9/6/00

Lab Orientation

 

 

 

Course Outline

 

GOALS: Learn basic principles and have hands-on experience with semiconductor fabrication technologies and device testing. Each student will fabricate and test polycrystalline Si gate, n-channel enhancement Si MOSFETs and related devices throughout the course.

INSTRUCTOR: Stella W. Pang

2304 EECS Bldg.

pang@eecs.umich.edu

LECTURES: Mondays, Wednesdays, and Fridays 1:30-2:30 pm; 1003 EECS.

LAB SESSIONS: Solid State Electronics Laboratory (SSEL) Instructional Laboratory,

1337 EECS (Cleanroom).

SSEL Testing Laboratory, 1434 EECS.

1 session (3-4 hours)/week.

9 Fabrication Laboratory in Cleanroom and 2 Device Testing Labs.

OFFICE HOURS: Wednesdays 2:30-4 pm, Thursdays 11:30 am-1 pm, and by appointment.

Grading: 8 Laboratory Reports on Fabrication, 1 Laboratory Report on Device Testing, and Laboratory Performance

Fabrication Lab Reports 1 to 8: 50 points each

Device Testing Lab Report (#9): 200 points

Lab Performance: 100 points

Total: 700 points

Reports should be written by each student individually and honor code is enforced. They are due on Fridays. Late reports will not be accepted.

Teaching Staff, Safety Seminar, and Class Email

 

Technical Staff:

Mr. Terre Briggs

terreb@eecs.umich.edu

In charge of the SSEL Instructional Lab for all Device Fabrication Processes.

Teaching Assistant:

Mr. Xin Zhu

xzhu@umich.edu

TA Mail Box on Third Floor

In charge of Simulations and Device Testing. Office hours.

Lab Safety Seminar

Ms. Lisa Stowe

lstowe@umich.edu

Occupational Safety & Environmental Health

September 18, 2000 (Monday) during class time.

Everyone has to attend this seminar before he/she is allowed to work in the cleanroom.

Email for Students in EECS 423

To be included in the email group (eecs423@eecs.umich.edu) for EECS 423:

email to eecs423-request@eecs.umich.edu and place in the subject line the word "subscribe".

EECS 423

Solid State Device Laboratory

4 Credit Hours

 

Background:

Basic understanding of semiconductor device physics including pn junctions, bipolar transistors, and field effect transistors. You are expected to be familiar with diodes and MOSFETs electrical characteristics.

Prerequisite:

EECS 320 Introduction to Semiconductor Device Theory

REQUIRED TEXT:

The Science and Engineering of Microelectronic Fabrication, Stephen Campbell (Oxford University Press, 1996)

REFERENCES (All on Reserve in library):

  1. Silicon VLSI Technology — Fundamentals, Practice and Modeling, Plummer, Deal, and Griffin (Prentice Hall, 2000)
  2. ULSI Technology, Chang and Sze (McGraw Hill, 1996)
  3. The Science and Engineering of Microelectronic Fabrication, Stephen Campbell (Oxford University Press, 1996)
  4. Semiconductor Device Fundamentals, Pierret (Addison-Wesley, 1996)
  5. Semiconductor Device - An Introduction, J. Singh (McGraw-Hill, 1994)
  6. Introduction to Microelectronic Fabrication, Modular Series on Solid State Devices Vol. V, by Richard C. Jaeger (Addison-Wesley, 1993)
  7. Thin Film Processes, J. Vossen and W. Kern, Vols. I and II (Academic Press, 1978 and 1991)
  8. Semiconductor Integrated Circuit Processing Technology, Runyan and Bean (Addison Wesley, 1990)
  9. Fundamentals of Microelectronics Processing, Lee (McGraw Hill, 1990)
  10. Modular Series on Solid State Devices, Vols. I, II, IV, VI, Neudeck and Pierret (Addison-Wesley, 1989-90)
  11. Electronic Materials Science and Technology, Murarka and Peckerar (Academic Press, 1989)
  12. Microelectronic Materials and Processes, Levy (Kluwer Academic Press, 1989)
  13. VLSI Technology, Sze (McGraw Hill, 1988)
  14. Silicon Processing for the VLSI Era, Wolf and Tauber (Lattice Press 1986)
  15. VLSI Fabrication Principles, Ghandhi (Wiley, 1983)
  16. Physics of Semiconductor Devices, Sze (Wiley, 1981)

 

Calendar for EECS 423

Fall 2000

 

Date

Topics

Laboratory

Readings

Report

9/6-8

Introduction

-

Chp. 1

-

9/11-15

Overview/Materials

Lab #1- Orientation/Wafer3

Chp. 2

-

9/18

Safety Seminar4

Must Attend

-

-

9/20-22

Oxidation

Lab #2 - Oxidation

Chp. 4

-

9/25-29

Lithography

Lab #3 - Lith and Etch

Chp. 7, 8

#1

10/2-6

Deposition - CVD

Lab #4 - Gate Oxide/Poly-Si5

Chp. 13

#2

10/9-13

Etching

Lab #5 - Plasma Etch

Chp. 11

#3

10/16-20

Diffusion/Ion Implant

Lab #6 - P-Deposition/Drive in

Chp. 3, 5

#4

10/23-27

Contacts

Lab #7 - Contact Opening

Chp. 15

#5

10/30-11/3

Deposition — Physical

Lab #8- Al Dep6/Etch

Chp. 12

#6

11/6-10

Annealing

Lab #9- Al Backside6

Chp. 6

#7

11/13-17

Device Measurements

10 - Testing

Device

#8

11/20-22

Device Physics

-

Device

-

11/27-12/1

Device Physics

11 - Testing

Device

-

12/4-8

Process Integration

-

Chp. 16

-

12/11-13

NO Class

-

-

-

12/18

Final Lab Report Due

-

-

#9

 

1. Lab Procedures and Lab Report Requirements will be handed out 1 week before each given Lab. You need to review the information prior to each Lab session. We will go over the details of each Lab in class on the Monday of each week.

2. You need to take notes in the Lab and keep any records or data needed for the Lab Report. You are encouraged to ask any questions about the Lab in class and in the Lab.

  1. Lab Orientation (#1) - Everyone has to take a Quiz on Lab safety and common Lab procedures.
  2. A safety seminar will be presented on September 18, 2000 (Monday). You have to attend this safety seminar in order to be allowed to work in the Lab.
  3. Poly-Si Deposition will be carried out by staff in Research Lab.
  4. Al Deposition will be carried out by staff in Research Lab.

 

 

 

Laboratory Reports and Performance

 

Reports

1. Each student should work on his/her own report - honor code is enforced.

2. Typically, each report (except the testing report) should be ~5 typed pages plus drawings and simulation results. It should include the following for each Lab:

I. Experimental Procedure: describe the experiments and measurements. Include reasons for each step and the measured process parameters (raw data) and the extracted parameters.

II. Results and Discussion: explain the observations and the measured results. Explain what you expect. Include detail calculations with equations, constants, and any charts used. Report the results and compare the measurements to theory, both quantitatively and qualitatively. Provide reasons if the experimental results are different from the measurements.

3. Draw a top view and a cross section view of the wafer at each major stage of the process.

4. Include Numbers, Diagrams, Plots, and Tables as much as possible to explain or present results.

5. The reports should be typed and well organized as a technical document.

6. Your grade will not depend on the device performance unless it is determined that your devices were damaged through malice or carelessness on your part. However, you need to provide explanations if the device performance is different from the expectations.

Performance

1. Input from Laboratory Staff and Teaching Assistant based on your performance in the Cleanroom and the Testing Lab.

2. Attendance - You need to be in the laboratory on time. Switching to a different Lab session is not allowed unless advanced approval is given.

3. Operate all the equipment in the laboratory safely, properly, and carefully. Read all handouts before the Lab.

  1. Cooperate with others in the laboratory.
  2. You active participation in the Lab activity. You are encouraged to ask questions and help out others in the Lab.

Honor Code for Laboratory Performance and Laboratory Reports

 

All laboratory work and laboratory reports are to be completed on your own. You are allowed to consult with other students in the current class, but all written work, whether in scrap or final form, are to be generated by you working alone. You are not allowed to work out the details of the laboratory reports with anyone. You should not compare your laboratory reports, whether in scrap paper form, or your final work product, to other students (and vice versa). You are also not allowed to possess, use, or in anyway derive advantage from the existence of laboratory reports prepared in prior years by former students. Violation of this policy is grounds for me to initiate an action that would be filed with the Dean's office and would come before the College of Engineering's Honor Council. If you have any questions about this policy, PLEASE do not hesitate to contact me.

Stella W. Pang

EECS Dept.

 

Solid State Device Laboratory

Student Interest and Background Profiles

Please return this page at the end of Class

 

Name: Grad/Undergrad (Year: )

 

Student ID (8 digits):

Email: Office Phone: Department: Advisor:

Research Topic or Interest:

Courses Taken or taking this semester (Include Similar or Equivalent Courses):

EECS 311 Electronics Circuits

EECS 313 Solid State Devices and Electronic Circuits

EECS 314 Circuit Analysis and Electronics

EECS 320 Introduction to Semiconductor Device Theory

EECS 411 Microwave Circuits I

EECS 413 Monolithic Amplifier Circuits

EECS 420 Introduction to Quantum Electronics

EECS 421 Properties of Transistors

EECS 425 Integrated Circuits Laboratory

EECS 427 VLSI Design I

EECS 429 Semiconductor Optoelectronic Devices

 

I agree to follow the honor code for the laboratory work and laboratory reports in this class.

(Please sign your name below)