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EECS 522 | Analog Integrated CircuitsHome | Lecture Notes | Problem Sets | CAD Assignments | Projects |
Very low area inductor-less dual-band LNA for GSM applicationsAbstract A dual-band (850/1900MHz) inductor-less LNA suitable for GSM applications is presented. LNA with common source topology with inductive degeneration is known to have the best noise figure. However, inductors take a huge area on silicon, which decreases the yield of a wafer. The removal of the inductors, while retaining power matching and low noise, is achieved by using a feed-forward noise cancelling resistor. The feed-forward path for noise canceling is also used as the signal feedback path which widens the bandwidth. This greatly reduces the total area, significantly reducing the unit cost of each LNA. An integrated switching capability between the two bands is also exploited. It can remove the necessity for an off-chip switch. Files |
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