About the Event
There is considerable interest in adapting amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) in such applications of active matrix flat panel displays (AM-FPDs) and imagers (AM-FPIs). This is because its higher mobility in amorphous phase, low off current and capability of the low temperature fabrication. In this dissertation, the characteristics of the double gate (DG) coplanar homojunction a-IGZO TFTs are investigated. With DG a-IGZO TFTs, a high on current and steep subthreshold swing are achieved without changing the off current by applying the same voltage on the bottom and top gates. In addition, the dynamic control of TFT’s threshold voltage is demonstrated by applying various voltages on the top gate. To explain these phenomena, the analytic models of DG a-IGZO TFTs are developed based on device physics. Furthermore, the illumination and bias-temperature stabilities are enhanced in comparison to traditional single gate a--IGZO TFTs. The superior electrical properties and stability of DG a--IGZO TFTs, observed in this dissertation, make the DG a-IGZO TFT a possible strong candidate for the pixel circuits of future high resolution AM-FPDs and AM-FPIs.